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The Carrier Concentration Dependence of the Debye Temperature θ in Heavily Doped n-Ge

✍ Scribed by P. I. Baranskii; A. I. Elizarov

Publisher
John Wiley and Sons
Year
1972
Tongue
English
Weight
215 KB
Volume
53
Category
Article
ISSN
0370-1972

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✍ Raju P. Gupta; Michèle Gupta 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 367 KB

Pressure dependence of the transition temperature r, in the electron-doped superconductor Nd,.85Ce,,,5Cu04 is considered to be anomalous since T, hardly varies with pressure, in contrast to the case of the hole-doped superconductors where there is initially an increase in T, with pressure reaching a