The buried stacked insulator—a new silicon on insulator structure formed by ion beam synthesis

Synthesis of buried silicon oxynitride l

Synthesis of buried silicon oxynitride layers by ion implantation for silicon-on-insulator (SOI) structures

✍ A.D. Yadav; Rucha H. Polji; Vibha Singh; S.K. Dubey; T.K. Gundu Rao 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 252 KB

Silicon oxynitride (Si x O y N z ) buried insulating layers were synthesized by SIMNOX (separation by implanted nitrogen-oxygen) process by 14 N + and 16 O + ion implantation to high fluence levels 1 • 10 17 , 2.5 • 10 17 and 5 • 10 17 ions cm À2 sequentially in the ratio 1:1 at 150 keV into p-type