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The behaviour of in-diffused copper in n-type CdSnAs2

โœ Scribed by M.I Daunov; B.M Ataev; V.I Danilov; B.A Magomedov


Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
207 KB
Volume
6
Category
Article
ISSN
1369-8001

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โœฆ Synopsis


The concentration dependences of the Hall coefficient, electrical resistivity and carrier parameters are used to characterize the interaction of copper diffused from an electrolytic layer into n-type CdSnAs 2 with intrinsic defects.


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