The behaviour of in-diffused copper in n-type CdSnAs2

✍ Scribed by M.I Daunov; B.M Ataev; V.I Danilov; B.A Magomedov

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 207 KB
• Volume: 6
• Category: Article
• ISSN: 1369-8001
• DOI: 10.1016/j.mssp.2003.05.005

✦ Synopsis

The concentration dependences of the Hall coefficient, electrical resistivity and carrier parameters are used to characterize the interaction of copper diffused from an electrolytic layer into n-type CdSnAs 2 with intrinsic defects.