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The base current and related 1/f noise for SiGe HBTs realized by SEG/NSEG technology on SOI and bulk substrates

✍ Scribed by N. Lukyanchikova; N. Garbar; A. Smolanka; M. Lokshin; S. Hall; O. Buiu; I.Z. Mitrovic; H.A.W. El Mubarek; P. Ashburn


Book ID
103846495
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
246 KB
Volume
9
Category
Article
ISSN
1369-8001

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