The Application of RHBD to n-MOSFETs Intended for Use in Cryogenic-Temperature Radiation Environments

✍ Scribed by Jun, Bongim; Sutton, Akil K.; Diestelhorst, Ryan M.; Duperon, Gregory J.; Cressler, John D.; Black, Jeffrey D.; Haeffner, Tim; Reed, Robert A.; Alles, Michael L.; Schrimpf, Ronald D.; Fleetwood, Daniel M.; Marshall, Paul W.

• Book ID: 120209698
• Publisher: IEEE
• Year: 2007
• Tongue: English
• Weight: 663 KB
• Volume: 54
• Category: Article
• ISSN: 0018-9499
• DOI: 10.1109/TNS.2007.910123