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The annealing effects of V-doped GaN thin films grown by MOCVD

✍ Scribed by M. Souissi; M. Bouzidi; B. El Jani

Book ID
116630182
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
445 KB
Volume
340
Category
Article
ISSN
0022-0248

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## Abstract Chlorine‐doped ZnO thin films were grown by MOCVD on sapphire and fused silica. Chlorine is incorporated in substitution for oxygen and acts as a donor, leading to an increase of electron concentration. Transport properties were studied for samples with different chlorine content. Hall