✦ LIBER ✦
The annealing behaviour of arsenic-implanted silicon between 600 and 800°C characterized by carrier density profiles
✍ Scribed by Wagner, C. ;El-Sadek, A.
- Publisher
- John Wiley and Sons
- Year
- 1984
- Tongue
- English
- Weight
- 402 KB
- Volume
- 82
- Category
- Article
- ISSN
- 0031-8965
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