The accumulation of radiation defects in gallium arsenide that has been subjected to pulsed and continuous ion implantation

✍ Scribed by M. V. Ardyshev; V. M. Ardyshev; Yu. Yu. Kryuchkov

• Book ID: 110141413
• Publisher: Springer
• Year: 2005
• Tongue: English
• Weight: 48 KB
• Volume: 39
• Category: Article
• ISSN: 1063-7826
• DOI: 10.1134/1.1882789