In this article, the complete theoretical analysis of a Doherty amplifier employing a Class AB bias condition for the Main and a Class C one for the Auxiliary devices, respectively, is presented. Starting from the simplified model of an active device, the analysis of the AB-C Doherty behavior is car
The AB-C Doherty power amplifier. Part II: Validation
✍ Scribed by Paolo Colantonio; Franco Giannini; Rocco Giofrè; Luca Piazzon
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 473 KB
- Volume
- 19
- Category
- Article
- ISSN
- 1096-4290
No coin nor oath required. For personal study only.
✦ Synopsis
In part I, the complete theoretical (and nonlinear) analysis of a Doherty amplifier employing a Class AB bias condition for the Main Amplifier and a Class C one for the Auxiliary device has been presented. In this article, the experimental validation of the proposed theory is presented, describing the step-by-step procedure to be adopted when designing an AB-C Doherty. The amplifier was realized at 2.14 GHz in hybrid form using two (0.5 lm, 1 mm gate periphery) GaN HEMTs. V
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