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Terahertz Radiation Mechanism from Femtosecond-Laser-Irradiated InAs (100) Surface

โœ Scribed by Takahashi, Hiroshi; Quema, Alex; Goto, Masahiro; Ono, Shingo; Sarukura, Nobuhiko


Book ID
125460840
Publisher
Institute of Pure and Applied Physics
Year
2003
Tongue
English
Weight
96 KB
Volume
42
Category
Article
ISSN
0021-4922

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Temperature-dependent terahertz radiatio
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Temperature-dependent increase of the terahertz (THz) electric field emitted from the surfaces of optically pumped narrow-gap semiconductors InAs, InSb, and Cd x Hg 1ร€x Te is presented. In the case of Cd 0.2 Hg 0.8 Te increase up to 15-17 times has been observed, when cooling the sample from the roo