Terahertz luminescence of GaAs-based heterostructures with quantum wells under the optical excitation of donors
โ Scribed by N. A. Bekin; R. Kh. Zhukavin; K. A. Kovalevskii; S. G. Pavlov; B. N. Zvonkov; E. A. Uskova; V. N. Shastin
- Book ID
- 110140915
- Publisher
- Springer
- Year
- 2005
- Tongue
- English
- Weight
- 77 KB
- Volume
- 39
- Category
- Article
- ISSN
- 1063-7826
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๐ SIMILAR VOLUMES
Low energy ion beam etching (IBE) at oblique angle at liquid nitrogen temperature has been applied for thinning of the cap layer of GaAs/InGaAs/GaAs (GaAs/AIGaAs/GaAs) heterostructures with near surface quantum wells (QWs) to study dielectric confinement effects . It was shown that this etching prov
Using a variational approach within the effective mass approximation we calculate the binding energy of the ground and some excited donor impurity states in quantum-well wires with rectangular and cylindrical transversal sections under the action of applied electric fields. We study the binding ener