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Tensor Evaluation of Anisotropic Stress Relaxation in Mesa-Shaped SiGe Layer on Si Substrate by Electron Back-Scattering Pattern Measurement: Comparison between Raman Measurement and Finite Element Method Simulation
✍ Scribed by Tomita, Motohiro; Nagasaka, Masaya; Kosemura, Daisuke; Usuda, Koji; Tezuka, Tsutomu; Ogura, Atsushi
- Book ID
- 120284015
- Publisher
- Institute of Pure and Applied Physics
- Year
- 2013
- Tongue
- English
- Weight
- 745 KB
- Volume
- 52
- Category
- Article
- ISSN
- 0021-4922
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