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Tensile strained Ge quantum wells on Si substrate: Post-growth annealing versus low temperature re-growth

✍ Scribed by M.J. Süess; L. Carroll; H. Sigg; A. Diaz; D. Chrastina; G. Isella; E. Müller; R. Spolenak

Book ID: 113810172
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 668 KB
Volume: 177
Category: Article
ISSN: 0921-5107
DOI: 10.1016/j.mseb.2011.10.009

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