Temperature relaxation and energy loss of hot carriers in graphene

✍ Scribed by H.M. Dong; W. Xu; R.B. Tan

• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 448 KB
• Volume: 150
• Category: Article
• ISSN: 0038-1098
• DOI: 10.1016/j.ssc.2010.07.016

✦ Synopsis

The temperature relaxation and energy loss of hot Dirac fermions are investigated theoretically in graphene with carrier-optical phonon scattering. The time evolutions of temperature and energy loss for hot Dirac fermions in graphene are calculated self-consistently. It shows that the carrier-optical phonon coupling results in the energy relaxation of hot carriers excited by an electric field, and the relaxation time for temperature is about 0.5-1 ps and the corresponding energy loss is about 10-25 nW per carrier for typically doped graphene samples with a carrier density range of 1-5 × 10 12 cm -2 . Moreover, we analyze the dependence of temperature and energy relaxation on initial hot carrier temperature, lattice temperature and carrier density in detail.