Temperature dependent time-to-breakdown (TBD) of TiN/HfO2 n-channel MOS devices in inversion

✍ Scribed by N.A. Chowdhury; X. Wang; G. Bersuker; C. Young; N. Rahim; D. Misra

• Book ID: 108210800
• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 271 KB
• Volume: 49
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/j.microrel.2009.02.003