Temperature-Dependent Photoluminescence Study on CdZnS/ZnS/MgZnS Separate-Confinement Heterostructures
✍ Scribed by Yoshimura, K. ;Ishizaki, S. ;Yamada, Y. ;Taguchi, T.
- Book ID
- 101378308
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 75 KB
- Volume
- 180
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
✦ Synopsis
CdZnS/ZnS/MgZnS separate-confinement heterostructures (SCHs) were grown on (100)-oriented GaAs substrates by low-pressure metalorganic chemical vapor deposition. Optical properties of SCHs were investigated by means of temperature-dependent photoluminescence (PL) spectroscopy in the temperature range of 4 to 300 K. In order to improve the crystalline quality of SCHs, a ZnS buffer layer was inserted prior to the growth of SCH structure on substrates. For a Cd 0.2 Zn 0.8 S/ZnS/Mg 0.25 Zn 0.75 S SCH structure with a ZnS buffer layer, which has the appropriate thickness of 100 nm, the decrease in PL intensity from 4 to 300 K was about two orders of magnitude. In comparison with the decrease observed for MQW structure, thermal quenching of the PL intensity was suppressed by about two orders of magnitude. It is expected that the suppression was attributed to the enhancement of carrier confinement by the insertion of a MgZnS cladding layer.