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Temperature-dependent light-output characteristics of GaInN light-emitting diodes with different dislocation densities

✍ Scribed by Chhajed, Sameer ;Cho, Jaehee ;Schubert, E. Fred ;Kim, Jong Kyu ;Koleske, Daniel D. ;Crawford, Mary H.


Publisher
John Wiley and Sons
Year
2011
Tongue
English
Weight
311 KB
Volume
208
Category
Article
ISSN
0031-8965

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✦ Synopsis


Abstract

We have experimentally investigated the temperature dependence of optical‐output power of light‐emitting diodes (LEDs) with different threading dislocation densities (TDDs) to assess the influence of the TDD on the temperature stability of LEDs. Whereas the LED with high TDD shows a 64% decrease in optical‐output power when the ambient temperature increases from 20 to 150 °C, the LED with low TDD shows only a 54% decrease. The temperature dependence of the optical‐output power and current dependence of the characteristic temperature T~ch~ of LEDs shows that short radiative recombination lifetime and low TDDs are essential to obtain LED characteristics that are tolerant of high temperatures.


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Characteristics of InGaN light-emitting
✍ Akita, Katsushi ;Kyono, Takashi ;Yoshizumi, Yusuke ;Kitabayashi, Hiroyuki ;Katay 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 141 KB

## Abstract InGaN light‐emitting diodes (LEDs) on GaN substrates with low threading dislocation densities (TDDs) were fabricated, and the characteristics of the LEDs were compared with those on sapphire substrates. LEDs with 3 nm‐thick‐quantum‐wells (QWs) grown on GaN as well as on sapphire substra