## Abstract InGaN light‐emitting diodes (LEDs) on GaN substrates with low threading dislocation densities (TDDs) were fabricated, and the characteristics of the LEDs were compared with those on sapphire substrates. LEDs with 3 nm‐thick‐quantum‐wells (QWs) grown on GaN as well as on sapphire substra
Temperature-dependent light-output characteristics of GaInN light-emitting diodes with different dislocation densities
✍ Scribed by Chhajed, Sameer ;Cho, Jaehee ;Schubert, E. Fred ;Kim, Jong Kyu ;Koleske, Daniel D. ;Crawford, Mary H.
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 311 KB
- Volume
- 208
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
We have experimentally investigated the temperature dependence of optical‐output power of light‐emitting diodes (LEDs) with different threading dislocation densities (TDDs) to assess the influence of the TDD on the temperature stability of LEDs. Whereas the LED with high TDD shows a 64% decrease in optical‐output power when the ambient temperature increases from 20 to 150 °C, the LED with low TDD shows only a 54% decrease. The temperature dependence of the optical‐output power and current dependence of the characteristic temperature T~ch~ of LEDs shows that short radiative recombination lifetime and low TDDs are essential to obtain LED characteristics that are tolerant of high temperatures.
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