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Temperature dependency of the intrinsic carrier density of hydrogenated amorphous silicon in MOS structures

✍ Scribed by W. R. Fahrner; G. Grabosch; D. Borchert; Y. Chan; S. Kwong; K. Man

Publisher: Springer
Year: 1999
Tongue: English
Weight: 186 KB
Volume: 3
Category: Article
ISSN: 1432-8488
DOI: 10.1007/s100080050154

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