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Temperature dependence of tunnel magnetoresistance and magnetization of IrMn based MTJ

โœ Scribed by Wi?niowski, P. ;Stobiecki, T. ;Czapkiewicz, M. ;Wrona, J. ;Rams, M. ;Kim, C. G. ;Kim, C. O. ;Hu, Y. K. ;Tsunoda, M. ;Takahashi, M.

Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
224 KB
Volume
201
Category
Article
ISSN
0031-8965

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Temperature dependence of magnetoresista
Temperature dependence of magnetoresistance in the magnetic tunnel junction with an asymmetrical barrier
โœ Jun-Zhong Wang; Bo-Zang Li; Zhan-Ning Hu ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 127 KB

By considering the excitation of the spin wave at the interface between magnetic electrodes and insulating barrier and 3r2 ลฝ . taking the mean-field approximation to the s-d exchange interaction, a T law is derived for the temperature T dependence of the exchange field in ferromagnets. Then we have