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Temperature dependence of the threshold current density in semiconductor lasers (λ = 1050–1070 nm)

✍ Scribed by Shashkin, I. S.; Vinokurov, D. A.; Lyutetskiy, A. V.; Nikolaev, D. N.; Pikhtin, N. A.; Rudova, N. A.; Sokolova, Z. N.; Slipchenko, S. O.; Stankevich, A. L.; Shamakhov, V. V.; Veselov, D. A.; Bakhvalov, K. V.; Tarasov, I. S.

Book ID: 118200819
Publisher: Springer
Year: 2012
Tongue: English
Weight: 201 KB
Volume: 46
Category: Article
ISSN: 1063-7826
DOI: 10.1134/s1063782612090217

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