Temperature dependence of the short-circuit current in MIS solar cells
✍ Scribed by S.K. Krawczyk; A. Jakubowski; M. Żurawska
- Publisher
- Elsevier Science
- Year
- 1981
- Weight
- 302 KB
- Volume
- 4
- Category
- Article
- ISSN
- 0379-6787
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📜 SIMILAR VOLUMES
The reason for the change in the short-circuit current density Jsc with increasing insulator layer thickness in MIS solar cells is considered to be due to an increase in the interface state recombination current J~ effected by the rise in the interface state Fermi level.
The dependence of the photocurrent of n+p crystalline and pin amorphous silicon cells on the angle of incident radiation has been investigated theoretically and experimentally. It is found that for angles larger than about 30 ° from the normal to the surface the photocurrent is significantly smaller