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Temperature dependence of the Raman linewidth and frequency shift in Ge and Si : S. Safran and B. Lax, Francis Bitter National Magnet Laboratory and Physics Department, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, U.S.A.


Publisher
Elsevier Science
Year
1975
Tongue
English
Weight
338 KB
Volume
16
Category
Article
ISSN
0038-1098

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