Temperature dependence of the phosphorus segregation at the twin boundary in an Fe–4 at.% Si alloy

✍ Scribed by P. Lejček; S. Hofmann

• Publisher: John Wiley and Sons
• Year: 1990
• Tongue: English
• Weight: 557 KB
• Volume: 16
• Category: Article
• ISSN: 0142-2421
• DOI: 10.1002/sia.7401601113

✦ Synopsis

Abstract

AES of in situ fractured bicrystals of an Fe–4 at.% Si alloy containing traces of phosphorus was used to study the temperature dependence of the segregation at the symmetrical {112} (coherent twin) grain boundary between 773 and 1173 K. The observed enrichment of P decreases with temperature, whereas that of Si increases slightly. This behaviour is described by a mutual repulsive interaction coefficient α′ = 92 kJ mol^−1^ of P and Si and the corre‐sponding pure binary segregation enthalpies Δ__H__0~P~ = −7.9 kJ mol^−1^ and Δ__H__0~Si~ = −3.0 kJ mol^−1^, the absolute values of which are considerably lower than those reported for polycrystalline samples of FeP and FeSi. The differences are explained on the basis of orientation, concentration and interaction effects.