Temperature dependence of ohmic shunt resistance in mercury cadmium telluride junction diode

A study of dislocation contribution from

A study of dislocation contribution from the temperature dependence of zero-bias resistance-area product of long-wavelength n-on-p mercury cadmium telluride diodes

✍ Gopal, Vishnu ;Gupta, Sudha 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 255 KB

## Abstract A study of the contribution of dislocations to the zero‐bias resistance–area product (__R__~0~__A__) of long‐wavelength infrared n‐on‐p mercury cadmium telluride (HgCdTe) diodes has been carried out from the modelling of the temperature dependence of __R__~0~__A__ product of diodes fabr