Temperature dependence of magnetoresistance of amorphous Fe80−xVxB14Si6

✍ Scribed by S.U. Jen; S.T. Lin

• Publisher: Elsevier Science
• Year: 1991
• Tongue: English
• Weight: 204 KB
• Volume: 133
• Category: Article
• ISSN: 0921-5093
• DOI: 10.1016/0921-5093(91)90022-f

✦ Synopsis

Amorphous Feso_xWxB148i6 with 0 ~< x ~< 16 have been made by the quench spinning method. We have measured the electrical resistivity P0, ferromagnetic anisotropy resistivity (FAR), Ap/po , and transverse force magnetoresistance (TFM) (Op/OH)± from 300 K to 10 K. For x/> 4, Tmi o is observed for each P0 versus T plot. P0(T) is fitted to a T ~/2 dependence and to a In T dependence respectively, to see which is better for T< Tm~ n. The anomalous behavior in resistivity does not seem to affect the temperature dependence of FAR. At 10 K, both magnetization and FAR are decreasing functions of x. As x is increased, TFM changes from a negative value to a positive value.