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Temperature dependence of current transport in palladium/LB-film/silicon diodes

โœ Scribed by B. O'Beirn; V. Casey; M.A. Gubbins; J.B. McMonagle


Book ID
114086574
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
53 KB
Volume
327-329
Category
Article
ISSN
0040-6090

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๐Ÿ“œ SIMILAR VOLUMES


Temperature dependence of carrier transp
โœ J.Y. Lee; F.Y. Wang ๐Ÿ“‚ Article ๐Ÿ“… 1986 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 512 KB

The carrier transport in polycrystalline silicon was studied over a wide temperature range, from 20K to 300K, and for a number of dopant concentrations ranging from 1.3 x 1018/cm 3 to 2.6 x 101S/cm 3. A grain boundary carrier trapping model was used to explain the experimental results in this work.