Frequency and temperature-dependent diel
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Y.K. Vayunandana Reddy; D. Mergel
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Article
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2007
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Elsevier Science
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English
β 410 KB
Thin film capacitors with BaTiO 3 as dielectric and RuO 2 as electrode material have been prepared by rf-magnetron sputtering at temperatures up to 750 1C and under various oxygen partial pressures. They have been analyzed by complex impedance spectroscopy in the temperature range 20-200 1C. At abou