✦ LIBER ✦
TaN and Sidewall Gate-Etch Damage Influence on Program, Erase, and Retention of Sub-50-nm TANOS nand Flash Memory Cells
✍ Scribed by Beug, M.F.; Melde, T.; Paul, J.; Knoefler, R.
- Book ID
- 114620431
- Publisher
- IEEE
- Year
- 2011
- Tongue
- English
- Weight
- 790 KB
- Volume
- 58
- Category
- Article
- ISSN
- 0018-9383
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