Ta2Si short time thermal oxidized layers in N2O and O2 to form high-k gate dielectric on SiC

✍ Scribed by A. Pérez-Tomás; N. Mestres; P. Godignon; J. Montserrat; J. Millán

• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 653 KB
• Volume: 253
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2006.03.011