Ta2O5/SiO2 multilayered thin film on Si as a proposed new reference material for SIMS depth profiling
✍ Scribed by Kim, Kyung Joong; Moon, Dae Won
- Publisher
- John Wiley and Sons
- Year
- 1998
- Tongue
- English
- Weight
- 406 KB
- Volume
- 26
- Category
- Article
- ISSN
- 0142-2421
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✦ Synopsis
A delta oxide multilayered thin Ðlm is proposed as a new reference material for SIMS depth proÐling. This material is composed of seven thick layers of 18 nm separated by 1 nm delta layers. The surface of Ta 2 O 5 SiO 2 the thin Ðlm was very Ñat and all the interfaces were sharp according to atomic force microscopy (AFM) and transmission electron microscopy (TEM). In SIMS depth proÐling, the dynamic range of the Si' ion signal at the layer was large enough to deÐne the depth resolution. The surface topographic development after ion beam SiO 2 sputtering was negligible under various sputtering conditions, as observed by AFM. This was well correlated with the result that there is no signiÐcant deterioration of SIMS interface resolution with sputter depth. This reference material can be useful in SIMS depth proÐling analysis to optimize the experimental parameters for a better depth resolution and to calibrate the sputtering rate.