Ta-Si-C High Resistivity Thin Films for Thermal Printing Heads
β Scribed by Nakamori, T.; Tsuruoka, T.; Kanamori, T.; Shibata, S.
- Book ID
- 117911667
- Publisher
- IEEE
- Year
- 1987
- Tongue
- English
- Weight
- 777 KB
- Volume
- 10
- Category
- Article
- ISSN
- 0148-6411
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π SIMILAR VOLUMES
Temperature coefficient of resistance (TCR) and resistivity of films are crucial factors for thermal resistive sensors and concerned with microstructure. In this paper, a Ta-Si-N thin film with high negative TCR of -6250 ppm/ β’ C at 30-100 β’ C has been fabricated on the silicon substrates by reactiv
The sputtering target for high-resistance thin film resistors plays a decisive role in temperature coefficient of resistance (TCR). Silicon-rich chromium (Cr)-silicon (Si) target was designed and smelted for high-resistance thin film resistors with low TCR. Valve metal tantalum (Ta) and aluminum (Al