✍ Scribed by J. Geerk; G. Linker; O. Meyer; F. Ratzel; J. Reiner; J. Remmel; T. Kröner; R. Henn; S. Massing; E. Brecht; B. Strehlau; R. Smithey; R.L. Wang; F. Wang; M. Siegel; C. Ritschel; B. Rauschenbach
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The Inverted Cylindrical Magnetron Sputtering (ICM) is a reliable and reproducible method for the production of HTSC thin films. This allows systematic studies of film growth as a function of various deposition parameters including film thickness, substrate material or buffer layers. We report the growth conditions and growth quality of ,,1-2-3" films of different orientation with special emphasis on a-axis films which may be of interest for applications if 3-dimensional patterning is attempted. Substrate orientation and substrate temperature are the essential parameters controlling the growth orientation. High quality buffer layers (FWHM mosaic spread <0.2 ° , Xmin<5% in channeling experiment) of Zr(Y)02 could be deposited on R-plane sapphire. Critical current densities near 3x106 A/cm2 at 77 K could be achieved for the 1-2-3 films deposited on these buffer layers. Finally we report results of in situ BiSrCaCuO thin film deposition revealing first signs of channeling behaviour (Xmin:60%) indicating towards epitaxial growth.
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