𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Systematic approach to modelling and parameter extraction of an ion-implanted GaAs MESFET

✍ Scribed by Kwok, H.I.; Wang, Z.J.

Book ID
114447695
Publisher
The Institution of Electrical Engineers
Year
1999
Tongue
English
Weight
369 KB
Volume
146
Category
Article
ISSN
1350-2409

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Quasi-two-dimensional simulation of an i
Quasi-two-dimensional simulation of an ion-implanted GaAs MESFET photodetector
✍ M. Madheswaran; V. Rajamani; P. Chakrabarti πŸ“‚ Article πŸ“… 2000 πŸ› John Wiley and Sons 🌐 English βš– 216 KB πŸ‘ 2 views

A quasi-two-dimensional numerical model of an optically ( ) gated GaAs metal semiconductor field-effect transistor MESFET has been de¨eloped for the characterization of the de¨ice as a photodetector. The model considers the channel to be nonuniformly doped. The model in¨ol¨es the solution of a 1-D P