System related impurity incorporation during the growth of gallium arsenide by molecular beam epitaxy: J D Grange,Vacuum, 32 (8), 1982, 477–480

• Publisher: Elsevier Science
• Year: 1985
• Tongue: English
• Weight: 170 KB
• Volume: 35
• Category: Article
• ISSN: 0042-207X
• DOI: 10.1016/0042-207x(85)90270-2