Synthesis of N-deficient GaN nanoparticles and its enhanced dielectric response

✍ Scribed by P.G. Li; M. Lei; Y.X. Du; X. Guo; W.H. Tang

• Book ID: 104002785
• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 421 KB
• Volume: 255
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2008.10.057

✦ Synopsis

In this paper, GaN nanoparticles were firstly synthesized through a facile solid-state reaction using an organic reagent cyanamide (CN 2 H 2 ) and Ga 2 O 3 as precursors. The structural properties were investigated in detail. It is found that these nanoparticles having average size of 40 nm were N-deficient with the N vacancies reaching as high as 12%. The Raman scattering spectrum of these nanoparticles presented some interesting features. The room-temperature frequency spectrum of the relative dielectric constant e r was measured and indicated that these nanoparticles exhibited sharp enhancement at low frequency range comparing with GaN nanomaterials and N-deficient microparticles. It is thought both the rotation direction polarization (RDP) and the space charge polarization (SCP) process should be responsible for the enhancement of e r in these N-deficient GaN nanoparticles.