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Synthesis of Gallane-Amine adducts as potential precursors for GaAs and (AlGa)as MOVPE processes and the crystal structure of the {gallane · 1,3-bis(dimethylamino)propane} adduct H3Ga · N(CH3)2(CH2)3N(CH3)2

✍ Scribed by Prof. Jörg Lorberth; Reiner Dorn; Sigrid Wocadlo; Werner Massa; Ernst O. Göbel; Thomas Marschner; Harry Protzmann; Otto Zsebök; Wolfgang Stolz


Publisher
John Wiley and Sons
Year
1992
Tongue
English
Weight
480 KB
Volume
4
Category
Article
ISSN
0935-9648

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