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Synchrotron x-ray irradiation effects on the device characteristics and the resistance to hot-carrier damage of MOSFETs with 4 nm thick gate oxides
✍ Scribed by Yuusuke Tanaka; Akira Tanabe; Katsumi Suzuki; Tsutomu Miyatake; Masaki Hirose
- Book ID
- 107457727
- Publisher
- Springer US
- Year
- 1998
- Tongue
- English
- Weight
- 176 KB
- Volume
- 27
- Category
- Article
- ISSN
- 0361-5235
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