Observation and photographing of the surface microstructure is made through the vacuum sealed window, 14, in the cryostat jacket, consisting of two plane-parallel quartz glass plates with a vacuum layer between them. An optical system, 15, with objectives having a large working
โฆ LIBER โฆ
Symposium on low temperature devices
โ Scribed by B. Yates
- Publisher
- Elsevier Science
- Year
- 1968
- Tongue
- English
- Weight
- 506 KB
- Volume
- 8
- Category
- Article
- ISSN
- 0011-2275
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
On indium seals in low temperature devic
โ
E.A. Jones; J.C.A. van der Sluijs
๐
Article
๐
1972
๐
Elsevier Science
๐
English
โ 232 KB
Autocompensating device for ultra-low te
โ
Yu.F Kiselev; A.N Chernikov; N.L Gorodishenin; V.A Evdokimov; S.S Katushonok
๐
Article
๐
1989
๐
Elsevier Science
๐
English
โ 358 KB
The fifth symposium on temperature
โ
L.G. Rubin; R.L. Powell; A.C. Anderson
๐
Article
๐
1971
๐
Elsevier Science
๐
English
โ 695 KB
The Fifth Symposium on 'Temperature, Its Measurement and Control in Science
A low temperature device for magneto-aco
โ
A.P. Korolyuk; V.F. Roi; A.V. Golik; V.I. Belitskii; L.Ya. Matsakov; M.B. Obolen
๐
Article
๐
1975
๐
Elsevier Science
๐
English
โ 185 KB
Ultra-high speed semiconductor devices a
โ
Takashi Mizutani; K. Hirata; M. Hirayama; A. Ishida
๐
Article
๐
1990
๐
Elsevier Science
๐
English
โ 538 KB
This paper reviews recent progress in GaAs MESFETs and HBTs for high speed integrated circuits. SAINT MESFETs have succeeded in scaling down gate lengths to O. 1 -O. 15/zm and have realized propagation delay times of 5.9 ps gate -~. A multiplexer and demultiplexer operating at a high bit rate of 11.
The use of superconductive devices in re
โ
I.M. Templeton
๐
Article
๐
1960
๐
Elsevier Science
๐
English
โ 228 KB