Implementation of symmetric Fabry-Perot
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P. Zouganeli; A. W. Rivers; G. Parry; J. S. Roberts
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Article
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1993
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Springer
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English
β 931 KB
We report results from a symmetric cavity electroabsorption modulator (SCEM) in GaAs/AIGaAs. A reflection change of ,-~45% with an insertion loss of 1.3dB is obtained under 7.5 V in the normally-off mode. We discuss the factors that affect the device performance and compare the attainable performanc