Switching losses of the cryogenic MOSFET and SIT

✍ Scribed by Otward Mueller

• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 589 KB
• Volume: 30
• Category: Article
• ISSN: 0011-2275
• DOI: 10.1016/0011-2275(90)90214-w

✦ Synopsis

Cryogenic MOSFET power conversion may be feasible in the near future for certain applications where high power pulses are required at low duty cycles. The eventual availability of high temperature superconductors will only enhance the implementation of such circuits based on low temperature electronics. High power conversion efficiency is then of extreme importance. It can be obtained by circuitry based on switch-mode configurations, especially those using (quasi)-resonant zero voltage or zero current switching techniques. The purpose of this paper is to investigate the switching losses of cryogenically cooled power MOSFETs. These losses are shown to be drastically reduced in the cryogenic mode of device operation.