Surface protection of oxide circuit by polyimide thin film
β Scribed by Y. Oshikubo; Y. Tarutani; H. Wakana; S. Adachi; Y. Ishimaru; K. Nakayama; T. Hato; O. Horibe; K. Tanabe
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 215 KB
- Volume
- 445-448
- Category
- Article
- ISSN
- 0921-4534
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β¦ Synopsis
Photosensitive polyimide was selected as a protection layer for the YBa 2 Cu 3 O 7Γx circuits and stability of ramp-edge-junction characteristics against atmospheric moisture was investigated. Both coating and patterning of the protection layer could simultaneously be formed on the ramp-edge-junctions by using the polyimide film. Characteristic change of the ramp-edge-junctions that were coated with a polyimide film were less than 10% after thermal cycling more than ten times between room temperature and liquid He temperature. On the other hand, characteristic change was much more than 20% for the bare junction as narrow as 2 lm.
π SIMILAR VOLUMES
The silicon-rich oxide (SiO x ) films were deposited using the LPCVD (Low Pressure Chemical Vapour Deposition) method at the temperature of 570 Β°C and with silane and oxygen as the reactant gasses. The films were deposited on silicon (1 1 1) substrates. The flows of oxygen and silan in the horizonta