𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Surface-Photovoltage Measurement of Volume Electron Lifetime in p-Si Wafers

✍ Scribed by V. A. Skidanov; M. S. Baev; N. A. Baikova


Book ID
110424371
Publisher
Springer
Year
2003
Tongue
English
Weight
38 KB
Volume
32
Category
Article
ISSN
1063-7397

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Contactless measurement of the Si-buried
✍ K. Nauka πŸ“‚ Article πŸ“… 1997 πŸ› Elsevier Science 🌐 English βš– 532 KB

Surface Photovoltage Technique has been employed to image distribution of the oxide charges present at the Si active layer -buried oxide interface in its vicinity. SOl substrates fabricated by oxygen ion implantation and by wafer bonding have been compared. Oxygen implanted wafers exhibited larger a

Study of Electron Lifetime in p-Si
✍ G. B. Abdullaev; Z. A. Iskender-Zade; E. A. Dzhafarova; V. E. Chelnokov πŸ“‚ Article πŸ“… 1967 πŸ› John Wiley and Sons 🌐 English βš– 374 KB