✦ LIBER ✦
Surface passivation using ultrathin AlN[sub x] film for Geâmetalâoxideâsemiconductor devices with hafnium oxide gate dielectric
✍ Scribed by Gao, Fei; Lee, S. J.; Pan, J. S.; Tang, L. J.; Kwong, Dim-Lee
- Book ID
- 120498585
- Publisher
- American Institute of Physics
- Year
- 2005
- Tongue
- English
- Weight
- 324 KB
- Volume
- 86
- Category
- Article
- ISSN
- 0003-6951
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