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Surface mass spectrometric analysis of SiCl4/SiF4/O2 dry etch gate recessed 120 nm T-gate GaAs pHEMTs

✍ Scribed by X. Li; K. Elgaid; H. McLelland; I.G. Thayne


Book ID
108207401
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
537 KB
Volume
78-79
Category
Article
ISSN
0167-9317

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