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Surface-layered Silicon Carbide for Enhanced Contact-damage Resistance

✍ Scribed by N. Padture


Book ID
110238741
Publisher
Springer
Year
1998
Tongue
English
Weight
124 KB
Volume
17
Category
Article
ISSN
0261-8028

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Low resistivity ohmic contacts on 4H-sil
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We investigated titanium based ohmic contacts using co-evaporated epitaxial titanium carbide (TiC) on highly 1 1 doped n -and p -type epilayers as well as Al ion implanted layers for high power and high temperature device application. Epitaxially grown TiC ohmic contacts on epilayers as well as Al i