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Surface intervalley scattering on GaAs(110) studied with picosecond laser photoemission

✍ Scribed by R. Haight; J.A. Silberman

Book ID
107925723
Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
349 KB
Volume
41-42
Category
Article
ISSN
0169-4332

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conduction band potential obtained from the threshold measurements shows only a small deviation from a fiat band, less than β€’ i 0.05 eV, tip to a point 4 A, from the silicon surface. There is no indication of a large ionic charge or of a greatly reduced SiO, bandgap to within about two lattice units