Surface impedance of silicon substrates and films

✍ Scribed by S. Gevorgian

• Publisher: John Wiley and Sons
• Year: 1998
• Tongue: English
• Weight: 261 KB
• Volume: 8
• Category: Article
• ISSN: 1096-4290
• DOI: 10.1002/(sici)1099-047x(199811)8:6<433::aid-mmce4>3.0.co;2-j

✦ Synopsis

It is shown that at microwave-millimeterwave frequencies and for DC resistivi-H ( ) I1 ties below s 2 f silicon should be regarded as a lossy metal characterized by 0 L

resistivity, skin depth, and surface impedance, while at higher resistivities it may be ( ) regarded as a lossy dielectric characterized by a lattice dielectric constant s 11.7 and L loss tangent. The sheet resistance defined as a ratio of DC resistivity to film thickness is not an adequate parameter to characterize the films at microwave frequencies. The surface impedance of a thin semiconductor film is complex with both real and imaginary parts strongly dependent on frequency, DC resistivity of substrate and film, substrate thickness, and the presence of a ground plane on the backside of the substrate.