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Surface energy and modes of catalytic growth of semiconductor nanowhiskers

✍ Scribed by V. G. Dubrovskii, A. D. Bol’shakov


Book ID
114992906
Publisher
SP MAIK Nauka/Interperiodica
Year
2012
Tongue
English
Weight
304 KB
Volume
38
Category
Article
ISSN
1063-7850

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## Abstract The structural properties of GaAs and AlGaAs nanowhiskers (NWs) grown by molecular beam epitaxy (MBE) on a GaAs substrate surfaces of different crystallographic orientations are investigated. Under optimal growth conditions, the aspect ratio of MBE grown GaAs NWs is higher than 100. The