Surface Coatings Based on Polysilsesquioxanes: Solution-Processible Smooth Hole-Injection Layers for Optoelectronic Applications
✍ Scribed by Daniel Kessler; Maria C. Lechmann; Seunguk Noh; Rüdiger Berger; Changhee Lee; Jochen S. Gutmann; Patrick Theato
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 366 KB
- Volume
- 30
- Category
- Article
- ISSN
- 1022-1336
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✦ Synopsis
Abstract
Optoelectronic devices usually consist of a transparent conductive oxide (TCO) as one electrode. Interfacial engineering between the TCO electrode and the overlying organic layers is an important method for tuning device performance. We introduce poly(methylsilsesquioxane)–poly(N,N‐di‐4‐methylphenylamino styrene) (PMSSQ–PTPA) as a potential hole‐injection layer forming material. Spin‐coating and thermally induced crosslinking resulted in an effective planarization of the anode interface. HOMO level (−5.6 eV) and hole mobility (1 × 10^−6^ cm^2^ · Vs^−1^) of the film on ITO substrates were measured by cyclovoltammetry and time‐of‐flight measurement demonstrating the hole injection capability of the layer. Adhesion and stability for further multilayer built‐up could be demonstrated. Contact angle measurements and tape tests after several solvent treatments proved the outstanding film stability.
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