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Suppression of the floating-body effect in SOI MOSFET's by the bandgap engineering method using a Si1-xGex source structure

✍ Scribed by Yoshimi, M.; Terauchi, M.; Nishiyama, A.; Arisumi, O.; Murakoshi, A.; Matsuzawa, K.; Shigyo, N.; Takeno, S.; Tomita, M.; Suzuki, K.; Ushiku, Y.; Tango, H.

Book ID: 114536700
Publisher: IEEE
Year: 1997
Tongue: English
Weight: 216 KB
Volume: 44
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.556152

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